HS56021 MOSFET Transistor

The HS56021 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HS56021 transistor as follows.

HS56021 Transistor Specification

Transistor Code		HS56021
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92MOD
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	15Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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