HFW8N65U MOSFET Transistor

The HFW8N65U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW8N65U transistor as follows.

HFW8N65U Transistor Specification

Transistor Code		HFW8N65U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		22nC

UXPython is not the creator or an official representative of the HFW8N65U MOSFET transistor. You can download the official HFW8N65U MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB6N90TM_AM002 MOSFET Transistor FQB2P40TM MOSFET Transistor FQB24N08TM MOSFET Transistor FQB6N40CTM MOSFET Transistor FQB11P06TM MOSFET Transistor PHB45N03LTA MOSFET Transistor FQB30N06LTM MOSFET Transistor HFW10N60S MOSFET Transistor FQB17N08TM MOSFET Transistor FQB8P10TM MOSFET Transistor FQB20N06LTM MOSFET Transistor FQB33N10TM MOSFET Transistor FQB5N15TM MOSFET Transistor FQB11N40CTM MOSFET Transistor FQB19N20LTM MOSFET Transistor FQB3P20TM MOSFET Transistor FQB70N10TM_AM002 MOSFET Transistor FQB12P10TM MOSFET Transistor FQB5N50CFTM MOSFET Transistor FQB5P20TM MOSFET Transistor