HFW5N50S MOSFET Transistor

The HFW5N50S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW5N50S transistor as follows.

HFW5N50S Transistor Specification

Transistor Code		HFW5N50S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	73W
Drain-Source Capacitance		86pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15.5nC

UXPython is not the creator or an official representative of the HFW5N50S MOSFET transistor. You can download the official HFW5N50S MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB25N33TM MOSFET Transistor FQB6N80TM MOSFET Transistor FQB5N90TM MOSFET Transistor FQB13N50CTM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB1P50TM MOSFET Transistor FQB6N40CTM MOSFET Transistor FQB3N30TM MOSFET Transistor FQB3N25TM MOSFET Transistor FQB65N06TM MOSFET Transistor FQB7N80TM_AM002 MOSFET Transistor FQB11N40CTM MOSFET Transistor PSMN012-80BS MOSFET Transistor FQB3N40TM MOSFET Transistor FQB12N60TM_AM002 MOSFET Transistor FQB19N20LTM MOSFET Transistor FCB20N60TM MOSFET Transistor FQB5P10TM MOSFET Transistor FCB11N60FTM MOSFET Transistor FQB10N20LTM MOSFET Transistor