HFW5N50S MOSFET Transistor

The HFW5N50S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW5N50S transistor as follows.

HFW5N50S Transistor Specification

Transistor Code		HFW5N50S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	73W
Drain-Source Capacitance		86pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15.5nC

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