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HFW11N40 MOSFET Transistor

The HFW11N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW11N40 transistor as follows.

Circuit diagram symbol of the HFW11N40 transistor

HFW11N40 Transistor Specification

Transistor Code HFW11N40
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.48Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 35nC

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