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HFS5N60S MOSFET Transistor

The HFS5N60S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFS5N60S transistor as follows.

Circuit diagram symbol of the HFS5N60S transistor

HFS5N60S Transistor Specification

Transistor Code HFS5N60S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 10.5nC

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