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HFS13N65U MOSFET Transistor

The HFS13N65U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFS13N65U transistor as follows.

Circuit diagram symbol of the HFS13N65U transistor

HFS13N65U Transistor Specification

Transistor Code HFS13N65U
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 54W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 60nC

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