HFS10N65S MOSFET Transistor

The HFS10N65S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFS10N65S transistor as follows.

HFS10N65S Transistor Specification

Transistor Code		HFS10N65S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.98Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29nC

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