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HFP9N50 MOSFET Transistor

The HFP9N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP9N50 transistor as follows.

Circuit diagram symbol of the HFP9N50 transistor

HFP9N50 Transistor Specification

Transistor Code HFP9N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.73Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 35nC

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