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HFP8N65U MOSFET Transistor

The HFP8N65U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP8N65U transistor as follows.

Circuit diagram symbol of the HFP8N65U transistor

HFP8N65U Transistor Specification

Transistor Code HFP8N65U
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 22nC

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