HFP80N75 MOSFET Transistor

The HFP80N75 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP80N75 transistor as follows.

HFP80N75 Transistor Specification

Transistor Code		HFP80N75
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		437pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS

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