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HFP6N70U MOSFET Transistor

The HFP6N70U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP6N70U transistor as follows.

Circuit diagram symbol of the HFP6N70U transistor

HFP6N70U Transistor Specification

Transistor Code HFP6N70U
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.3Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 16nC

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