HFP60N06 MOSFET Transistor

The HFP60N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP60N06 transistor as follows.

HFP60N06 Transistor Specification

Transistor Code		HFP60N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		237pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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