HFP50N06V MOSFET Transistor

The HFP50N06V is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP50N06V transistor as follows.

HFP50N06V Transistor Specification

Transistor Code		HFP50N06V
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		189pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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