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HFP4N60 MOSFET Transistor

The HFP4N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP4N60 transistor as follows.

Circuit diagram symbol of the HFP4N60 transistor

HFP4N60 Transistor Specification

Transistor Code HFP4N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55nS

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