HFP45N06 MOSFET Transistor

The HFP45N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP45N06 transistor as follows.

HFP45N06 Transistor Specification

Transistor Code		HFP45N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	131W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		74nS

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