HFP30N06 MOSFET Transistor

The HFP30N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP30N06 transistor as follows.

HFP30N06 Transistor Specification

Transistor Code		HFP30N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS

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