HFP13N10 MOSFET Transistor

The HFP13N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFP13N10 transistor as follows.

HFP13N10 Transistor Specification

Transistor Code		HFP13N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.3nS

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