HFH20N50 MOSFET Transistor

The HFH20N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFH20N50 transistor as follows.

HFH20N50 Transistor Specification

Transistor Code		HFH20N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		210nS

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