HFH19N60 MOSFET Transistor

The HFH19N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFH19N60 transistor as follows.

HFH19N60 Transistor Specification

Transistor Code		HFH19N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		210nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		95nC

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