HFH18N50S MOSFET Transistor

The HFH18N50S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFH18N50S transistor as follows.

HFH18N50S Transistor Specification

Transistor Code		HFH18N50S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.265Ohm
Power Dissipation (Maximum)	PD	239W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		165nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		52nC

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