HFD4N50 MOSFET Transistor

The HFD4N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFD4N50 transistor as follows.

HFD4N50 Transistor Specification

Transistor Code		HFD4N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		13nC

UXPython is not the creator or an official representative of the HFD4N50 MOSFET transistor. You can download the official HFD4N50 MOSFET transistor datasheet to get more infromation about this transistor.

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