HFD2N90 MOSFET Transistor

The HFD2N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFD2N90 transistor as follows.

HFD2N90 Transistor Specification

Transistor Code		HFD2N90
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.6Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		17nC

UXPython is not the creator or an official representative of the HFD2N90 MOSFET transistor. You can download the official HFD2N90 MOSFET transistor datasheet to get more infromation about this transistor.

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