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HFB1N70S MOSFET Transistor

The HFB1N70S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFB1N70S transistor as follows.

Circuit diagram symbol of the HFB1N70S transistor

HFB1N70S Transistor Specification

Transistor Code HFB1N70S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 17.5Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 22pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 3.5nC

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