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HCT7000MTXV MOSFET Transistor

The HCT7000MTXV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HCT7000MTXV transistor as follows.

Circuit diagram symbol of the HCT7000MTXV transistor

HCT7000MTXV Transistor Specification

Transistor Code HCT7000MTXV
Transistor Type MOSFET
Control Channel Type N-Channel
Package LCC
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 40V
Drain Current (Maximum) ID 0.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 0.3W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V

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