HAT2279N MOSFET Transistor

The HAT2279N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT2279N transistor as follows.

HAT2279N Transistor Specification

Transistor Code		HAT2279N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAKI
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0123Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.5nS

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