HAT2185WP MOSFET Transistor

The HAT2185WP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT2185WP transistor as follows.

HAT2185WP Transistor Specification

Transistor Code		HAT2185WP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		98pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS

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