HAT2165N MOSFET Transistor

The HAT2165N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT2165N transistor as follows.

HAT2165N Transistor Specification

Transistor Code		HAT2165N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAKI
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0036Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Total Gate Charge		33nC

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