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HAT2019R MOSFET Transistor

The HAT2019R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT2019R transistor as follows.

Circuit diagram symbol of the HAT2019R transistor

HAT2019R Transistor Specification

Transistor Code HAT2019R
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 550pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 180nS

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