HAT1139H MOSFET Transistor

The HAT1139H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT1139H transistor as follows.

HAT1139H Transistor Specification

Transistor Code		HAT1139H
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS
Total Gate Charge		73nC

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