HAT1127H MOSFET Transistor

The HAT1127H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT1127H transistor as follows.

HAT1127H Transistor Specification

Transistor Code		HAT1127H
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		1180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Total Gate Charge		125nC

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