HAT1111C MOSFET Transistor

The HAT1111C is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT1111C transistor as follows.

HAT1111C Transistor Specification

Transistor Code		HAT1111C
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		CMFPAK6
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.245Ohm
Power Dissipation (Maximum)	PD	1.25W

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