HAT1065R MOSFET Transistor

The HAT1065R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAT1065R transistor as follows.

HAT1065R Transistor Specification

Transistor Code		HAT1065R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	0.25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.2Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		37pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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