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HAF2012L MOSFET Transistor

The HAF2012L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF2012L transistor as follows.

Circuit diagram symbol of the HAF2012L transistor

HAF2012L Transistor Specification

Transistor Code HAF2012L
Transistor Type MOSFET
Control Channel Type N-Channel
Package LDPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.043Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 630pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29000nS

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