HAF2011L MOSFET Transistor

The HAF2011L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF2011L transistor as follows.

HAF2011L Transistor Specification

Transistor Code		HAF2011L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		66000nS

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