HAF2007L MOSFET Transistor

The HAF2007L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF2007L transistor as follows.

HAF2007L Transistor Specification

Transistor Code		HAF2007L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12400nS

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