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HAF1004L MOSFET Transistor

The HAF1004L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HAF1004L transistor as follows.

Circuit diagram symbol of the HAF1004L transistor

HAF1004L Transistor Specification

Transistor Code HAF1004L
Transistor Type MOSFET
Control Channel Type P-Channel
Package DPAK-2
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 20W
Drain-Source Capacitance 326pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7600nS

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