H7P1002DS MOSFET Transistor

The H7P1002DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7P1002DS transistor as follows.

H7P1002DS Transistor Specification

Transistor Code		H7P1002DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Total Gate Charge		45nC

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