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H7P1002DS MOSFET Transistor

The H7P1002DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7P1002DS transistor as follows.

Circuit diagram symbol of the H7P1002DS transistor

H7P1002DS Transistor Specification

Transistor Code H7P1002DS
Transistor Type MOSFET
Control Channel Type P-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 190pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Total Gate Charge 45nC

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