H7P0601DS MOSFET Transistor

The H7P0601DS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7P0601DS transistor as follows.

H7P0601DS Transistor Specification

Transistor Code		H7P0601DS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Total Gate Charge		37nC

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