H7N1002LS MOSFET Transistor

The H7N1002LS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N1002LS transistor as follows.

H7N1002LS Transistor Specification

Transistor Code		H7N1002LS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		155nC

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