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H7N1002AB MOSFET Transistor

The H7N1002AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N1002AB transistor as follows.

Circuit diagram symbol of the H7N1002AB transistor

H7N1002AB Transistor Specification

Transistor Code H7N1002AB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 100W
Total Gate Charge 155nC

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