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H7N0607DS MOSFET Transistor

The H7N0607DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N0607DS transistor as follows.

Circuit diagram symbol of the H7N0607DS transistor

H7N0607DS Transistor Specification

Transistor Code H7N0607DS
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.026Ohm
Power Dissipation (Maximum) PD 25W
Total Gate Charge 21nC

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