H7N0602AB MOSFET Transistor

The H7N0602AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N0602AB transistor as follows.

H7N0602AB Transistor Specification

Transistor Code		H7N0602AB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0041Ohm
Power Dissipation (Maximum)	PD	100W
Total Gate Charge		140nC

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