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H7N0312AB MOSFET Transistor

The H7N0312AB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H7N0312AB transistor as follows.

Circuit diagram symbol of the H7N0312AB transistor

H7N0312AB Transistor Specification

Transistor Code H7N0312AB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 85A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0026Ohm
Power Dissipation (Maximum) PD 125W
Total Gate Charge 115nC

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