H5N2514P MOSFET Transistor

The H5N2514P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2514P transistor as follows.

H5N2514P Transistor Specification

Transistor Code		H5N2514P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		820pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		350nS
Total Gate Charge		155nC

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