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H5N2510DS MOSFET Transistor

The H5N2510DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2510DS transistor as follows.

Circuit diagram symbol of the H5N2510DS transistor

H5N2510DS Transistor Specification

Transistor Code H5N2510DS
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 250V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.68Ohm
Power Dissipation (Maximum) PD 25W

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