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H5N2509P MOSFET Transistor

The H5N2509P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2509P transistor as follows.

Circuit diagram symbol of the H5N2509P transistor

H5N2509P Transistor Specification

Transistor Code H5N2509P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 250V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.053Ohm
Power Dissipation (Maximum) PD 150W
Total Gate Charge 110nC

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