H5N2508DS MOSFET Transistor

The H5N2508DS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2508DS transistor as follows.

H5N2508DS Transistor Specification

Transistor Code		H5N2508DS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	30W

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