H5N2305PF MOSFET Transistor

The H5N2305PF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2305PF transistor as follows.

H5N2305PF Transistor Specification

Transistor Code		H5N2305PF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PFM
Drain-Source Voltage (Maximum)	VDS	230V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		130nS
Total Gate Charge		105nC

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