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H5N2004DL MOSFET Transistor

The H5N2004DL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2004DL transistor as follows.

Circuit diagram symbol of the H5N2004DL transistor

H5N2004DL Transistor Specification

Transistor Code H5N2004DL
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 200V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 30W

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