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H5N2001LD MOSFET Transistor

The H5N2001LD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N2001LD transistor as follows.

Circuit diagram symbol of the H5N2001LD transistor

H5N2001LD Transistor Specification

Transistor Code H5N2001LD
Transistor Type MOSFET
Control Channel Type N-Channel
Package LDPAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 75W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 44nC

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